首页> 外文OA文献 >Imaging resonant dissipation from individual atomic defects in graphene
【2h】

Imaging resonant dissipation from individual atomic defects in graphene

机译:成像石墨烯中单个原子缺陷的共振耗散

代理获取
本网站仅为用户提供外文OA文献查询和代理获取服务,本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文,但由于OA文献来源多样且变更频繁,仍可能出现获取不到、文献不完整或与标题不符等情况,如果获取不到我们将提供退款服务。请知悉。

摘要

Conversion of electric current into heat involves microscopic processes that operate on nanometer length scales and release minute amounts of power. Although central to our understanding of the electrical properties of materials, individual mediators of energy dissipation have so far eluded direct observation. Using scanning nanothermometry with submicrokelvin sensitivity, we visualized and controlled phonon emission from individual atomic-scale defects in graphene. The inferred electron-phonon “cooling power spectrum” exhibits sharp peaks when the Fermi level comes into resonance with electronic quasi-bound states at such defects. Rare in the bulk but abundant at graphene’s edges, switchable atomic-scale phonon emitters provide the dominant dissipation mechanism. Our work offers insights for addressing key materials challenges in modern electronics and enables control of dissipation at the nanoscale.
机译:电流转化为热量涉及微观过程,这些过程在纳米级尺度上运行,并释放出微量的能量。尽管对于我们了解材料的电学特性至关重要,但迄今为止,直接耗散能量的各个中介体尚无定论。使用具有亚微开尔文灵敏度的扫描纳米温度计,我们可视化并控制了石墨烯中单个原子级缺陷的声子发射。当费米能级与此类缺陷处的电子准束缚态发生共振时,推断出的电子声子“冷却功率谱”会显示出尖峰。可切换的原子级声子发射器体积虽大,但在石墨烯的边缘却很丰富,提供了主要的耗散机制。我们的工作为解决现代电子学中的关键材料挑战提供了见识,并能够控制纳米级的耗散。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
代理获取

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号